Nano-ring gate electrode nanochannels

ABSTRACT

A technique includes providing a nanodevice. A gate electrode structure has nanochannels with a first end connected to a first common trench and a second end connected to a second common trench. A gate electrode extends laterally as a continuous line on the gate electrode structure and is formed in each of the nanochannels. The gate electrode forms a separate nano-ring electrode around a partial circumference inside each of the nanochannels. The gate electrode is parallel to the first and second common trenches and is perpendicular to the nanochannels.

DOMESTIC PRIORITY

This application claims priority to U.S. application Ser. No.14/225,694, filed Mar. 26, 2014, which is incorporated herein byreference in its entirety.

BACKGROUND

Embodiments relate to nanodevices, and more particularly to nano-ringgate electrodes formed in nanochannels.

Nanopore sequencing is a method for determining the order in whichnucleotides occur on a strand of deoxyribonucleic acid (DNA). A nanoporeis a small hole in the order of several nanometers in internal diameter.The theory behind nanopore sequencing relates to what occurs when thenanopore is immersed in a conducting fluid and an electric potential(voltage) is applied across the nanopore. Under these conditions, aslight electric current due to conduction of ions through the nanoporecan be measured, and the amount of current is very sensitive to the sizeand shape of the nanopore. If single bases or strands of DNA pass (orpart of the DNA molecule passes) through the nanopore, this can create achange in the magnitude of the current through the nanopore. Otherelectrical or optical sensors can also be placed around the nanopore sothat DNA bases can be differentiated while the DNA passes through thenanopore.

DNA could be driven through the nanopore by using various methods. Forexample, an electric field might attract the DNA towards the nanopore,and DNA might eventually pass through the nanopore.

BRIEF SUMMARY

According to an embodiment, a nanodevice is provided. The nanodeviceincludes a gate electrode structure having nanochannels with a first endconnected to a first common trench and a second end connected to asecond common trench, and a gate electrode extended laterally as acontinuous line on the gate electrode structure and formed in each ofthe nanochannels. The gate electrode forms a separate nano-ringelectrode around a partial circumference inside each of thenanochannels. The gate electrode is parallel to the first and secondcommon trenches and is perpendicular to the nanochannels.

According to an embodiment, a method of providing a nanodevice isprovided. The method includes providing a gate electrode structurehaving nanochannels with a first end connected to a first common trenchand a second end connected to a second common trench, and providing agate electrode which extends laterally as a continuous line on the gateelectrode structure and is formed in each of the nanochannels. The gateelectrode forms a separate nano-ring electrode around a partialcircumference inside each of the nanochannels. The gate electrode isparallel to the first and second common trenches and is perpendicular tothe nanochannels.

According to an embodiment, a method of controlling biomolecules in ananodevice is provided. The method includes providing a gate electrodestructure having a nanochannel with a first end connected to a firstcommon trench and a second end connected to a second common trench, andproviding a gate electrode which extends laterally as a continuous lineon the gate electrode structure and is formed in the nanochannel. Thegate electrode forms a nano-ring electrode around a partialcircumference inside of the nanochannel. The gate electrode is parallelto the first and second common trenches and is perpendicular to thenanochannel. A biomolecule is trapped in the nanochannel by applying afirst voltage to the gate electrode.

Other systems, methods, apparatus, design structures, and/or computerprogram products according to embodiments will be or become apparent toone with skill in the art upon review of the following drawings anddetailed description. It is intended that all such additional systems,methods, apparatus, design structures, and/or computer program productsbe included within this description, be within the scope of theexemplary embodiments, and be protected by the accompanying claims. Fora better understanding of the features, refer to the description and tothe drawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The subject matter which is regarded as the invention is particularlypointed out and distinctly claimed in the claims at the conclusion ofthe specification. The forgoing and other features are apparent from thefollowing detailed description taken in conjunction with theaccompanying drawings in which:

FIG. 1 illustrates a perspective view of a thin stripe-type gateelectrode structure according to an embodiment.

FIGS. 2A and 2B illustrate cross-sectional views of the nanochannelsealing process of the thin stripe-type gate electrode structureaccording to an embodiment.

FIG. 3A illustrates the thin stripe-type gate electrode structure withmetal electrode pads according to an embodiment.

FIG. 3B illustrates a perspective view of a microchannel assembly formedon top of the thin stripe-type gate electrode structure in a nanodeviceaccording to an embodiment.

FIG. 3C illustrates a top down view of the nanodevice according to anembodiment.

FIG. 4 illustrates a method of providing the nanodevice according to anembodiment.

FIG. 5A is a voltage profile illustrating an example of trapping thebiomolecule in the nanochannel using a single gate electrode accordingto an embodiment.

FIG. 5B is a voltage profile illustrating an example of stretching thebiomolecule in the nanochannel using a single gate electrode accordingto an embodiment.

FIG. 6 illustrates a schematic of the nanodevice with multiple thin gateelectrodes each crossing the narrow nanochannels according to anembodiment.

FIG. 7 illustrates a computer test setup which may implement, control,and/or regulate features discussed herein according to an embodiment.

DETAILED DESCRIPTION

Reliable and stable electrical-trap generation is important formanipulation of charged molecules in bio-electronic interface devices,such as an ionic transistor. To this point, a stable device performanceof the ionic transistor has been hardly achieved because of drawbacks,such as leakage current or shorting current, when the nanodevice isimmersed in a liquid solution. Direct exposure of gate-metal/gate-oxidesurface to cis reservoir or trans reservoir has led to significantleakage and shorting problems, which hinders reliable electronicfunctions of the nanodevice, such as detection and manipulation ofcharged molecules.

FIG. 1 illustrates a perspective view of a thin stripe-type gateelectrode structure 100 to create a highly-localized electricalpotential trap coupling with a nanochannel structure according to anembodiment. FIG. 1 shows a translucent view of features in the thinstripe-type gate electrode structure 100 for explanation purposes.

The thin stripe-type gate electrode structure 100 is formed in a basematerial 105 with a hard mask 110 on top. Electron beam lithography isutilized to etch the sub-20 nm features of a single thin gate electrode115 and narrow nanochannels 150. There may be 1-N nanochannels 150,where N is the last nanochannel. The nanochannels 150 each have one endconnected to a first common trench 160 and the opposite end connected toa second common trench 165. The first and second common trenches 160 and165 are etched into the base material 105.

FIGS. 2A and 2B illustrate cross-sectional views of the nanochannelsealing process (i.e., pinch off) of the thin stripe-type gate electrodestructure 100 according to an embodiment. FIG. 2A shows across-sectional view taken from A-A in FIG. 1.

In FIG. 2A, the hard mask 110 is on the base material 105 but does notcover the nanochannels 150. The single thin gate electrode 115 isdeposited (e.g., by conformal deposition) on the hard mask 110 and ineach of the nanochannels 150. In the nanochannels 150, the gateelectrode 115 forms a nano-ring gate electrode 117. Each nanochannel 150has its own nano-ring gate electrode 117 formed by depositing the metalfor the gate electrode 115. The nano-ring gate electrode 117 is a ringshape (like a circle) that conforms to the inner shape of thenanochannel 150, and the nano-ring gate electrode 117 is open at the topsuch that the ring shape of metal is not completely closed.

FIG. 2B illustrates depositing a sealing film 175 (via a conformaldeposition method) to cover the top of thin stripe-type gate electrodestructure 100 and to seal the nanochannel 150. The conformal sealingfilm 175 seals the nanochannel 150 but leaves a void/opening 180 withinthe sealed nanochannel 150. The voids 180 extend the entire length ofthe nanochannels 150 and connect to the first and second common trenches160 and 165. The voids 180 (in the sealed nanochannels 150) allow thebiomolecules and electrolyte to flow from the first common trench 160 tothe second common trench 165.

The width/diameter (w2) of the nanochannel 150 is about 70 to 100nanometers (nm). The width (w3) of the first and second common trenches160 and 165 is about ˜1 (micrometer) μm. The width (w1) of the thin gateelectrode 115 is less than 20 nanometers, and accordingly, the width ofthe nano-ring electrode 117 is less than 20 nanometers. In another case,the gate electrode 115 has a line width (w1) of about 10 to 20nanometers, and accordingly, the line width of the nano-ring electrode117 is about 10 to 20 nanometers. The line width of the thin gateelectrode 115 is the same as the width of the nano-ring gate electrode117 formed in the nanochannels 150.

After the single thin gate electrode 115 is deposited, the interiorwidth (w4) in the nanochannel 150 is about 30 to 60 nm. The width (w5)of the opening 180 of the nanochannel 150 in FIG. 2A is about 20 to 40nm. Therefore, the diameter/width (w6) of the void 180 in FIG. 2B is sub20 nm. The diameter/width (w6) of the void 180 is defined as following:w6=w4−w5. Therefore, the size of w6 is the difference in width betweenw4 and w5.

The thickness of the hard mask 110 is about 10 to 20 nm. The thicknessof the thin gate electrode 115 is about 10 to 20 nm. The base material105 may be an available wet-etching material such as an oxide,dielectric, etc., with a high-K (i.e., high dielectric constant). Thehard mask 110 may be a wet-etching hard mask material such as silicon.The thin gate electrode 115 may be a metal such as copper (Cu), gold(Au), silver (Ag), aluminum (Al), ruthenium (Ru), cobalt (Co), nickel(Ni), palladium (Pd), platinum (Pt), titanium (Ti), tantalum (Ta),titanium nitride (TiN), tantalum nitride (TaN) and/or other alloys. Inaddition, the gate electrode 115 can be transparent conducting oxide(TCO) materials such as indium-tin-oxide (ITO), zinc oxide (ZnO) and/orother alloys. The thin gate electrode 115 may be deposited using aconformal film deposition method for metal layers.

As can be seen in FIGS. 1 and 2 (and FIGS. 3 and 6 below), the thinstripe-type gate electrode 115 is perpendicularly aligned withlateral-type nanochannels 150. The crossover gate electrode 115 producesa localized electrical-potential trap in the nanochannel 150, which isbeneficial for electrical manipulations of charged biomolecules. Thenanochannel trench-shape (of nanochannels 150) is generated byelectron-beam lithography (EBL) and reactive ion etching (RIE) process.Isotropic wet-etching process produces the undercut-geometry withround-shaped pipe structure. Upon the undercut-structure, a conformalmetal-film is deposited. A thin stripe-type gate electrode 115 ispatterned by EBL and a wet-etching process. The metal stripe is crossingthe nanochannel, thus enabling a crossover junction structure. Theconformal dielectric-film is deposited for sealing the nanochannel. Thenanochannels are surrounded by dielectric/oxide (sealing film 175) andmetal layers (i.e., nano-ring gate electrode 117) Gate electrode 115 andnano-ring gate electrode 117 are physically the same materials.

FIGS. 3A, 3B, and 3C illustrate assembly of the thin stripe-type gateelectrode structure 100 in a nanodevice 300 according to an embodiment.A microchannel (microfluidic) assembly is sealed to the electrodestructure 100. FIGS. 3A, 3B, and 3C may be referred to generally as FIG.3. Some details in FIGS. 1 and 2 are omitted or not identified in FIG. 3so as not to obscure the FIG. 3, but it is understood that theseelements are meant to be included.

FIG. 3A illustrates the thin stripe-type gate electrode structure 100with first and second (metal) electrode pads 305 and 310 deposited atopposite ends of the single thin gate electrode 115. A conformal filmdeposition is used for metal layer deposition to deposit the singlemetal gate electrode 115. The metal line pattern of the single thin gateelectrode 115 has a continuous line shape from one electrode pad 305 tothe other electrode pad 310. Voltage of a voltage source 302 can beapplied to trap a biomolecule in the nanochannel 150 when the voltage isapplied with a polarity opposite the charge of the biomolecule.

FIG. 3B illustrates a perspective view of a microchannel assembly formedon top of and aligned with the thin stripe-type gate electrode structure100 in a nanodevice 300 according to an embodiment. The microchannelassembly may be formed by existing microchannel fabrication asunderstood by one skilled in the art. The microchannel assembly(microfluidic chamber) is assembled with the ion transistor device(i.e., the structure 100 in FIG. 3A). Soft materials such aspolydimethylsiloxane (PDMS) or organosilicon material can be used asmicrofluidic chamber materials. FIG. 3B shows a translucent view toillustrate certain internal details. Note that every detail of the thinstripe-type gate electrode structure 100 is not shown so as not toobscure the figure.

The microchannel assembly has a cis chamber 320 and trans chamber 325.The cis chamber 320 has an elongated portion 323 with an opening alignedto the first common trench 160, while the trans chamber 325 has anelongated portion 328 with an opening aligned to the second commontrench 165. The cis chamber 320 includes two microchannels 321connecting two ports 322 to the elongated portion 323. The trans chamber325 includes two microchannels 326 connecting two ports 327 to theelongated portion 328.

An electrolyte solution fills the chambers 320 and 325 and thenanochannels 150. The electrolyte solution is a conductive fluid, suchas a salt solution with ions for conducting electricity when voltage isapplied. Biomolecules may be added to the cis chamber 320 via ports 322.

A voltage source 330 may be connected to the cis chamber 320 and thetrans chamber 325 to drive biomolecules into and through thenanochannels 150 via cis electrode 370 and trans electrode 375.

FIG. 3C illustrates a top down view of the nanodevice 300 according toan embodiment. FIG. 3C shows a translucent view to illustrate certaininternal details.

As can be seen in FIGS. 1-3 (along with FIG. 6 below), embodiments havea crossover type architecture between the nanochannels 150 and the(single) gate electrode 115, where the localized electrical-potentialtrap can be generated at the junction point of a 20 nm (w1) by 20 nm(w6) area (in one implementation gate electrode and nanochanneldimensions, respectively). In particular, conformal thin-film depositionmethods are utilized, such as chemical vapor deposition (CVD) oratomic-layer deposition (ALD), to build the self-sealed nanochannelstructure of the nanochannels 150. The thin stripe-type gate electrode115 is perpendicularly aligned with the nanochannel 150, thus enablingcrossover junction geometry. The surrounding gate electrode 115 (i.e.,each separate nano-ring electrode 117 in each respective nanochannel150) formed by conformal film-deposition is configured to provide ahighly efficient gate coupling behavior of ionic transport. In addition,due to the separation of gate electrode geometry (of the nano-ringelectrodes 117) from cis chamber 320 and/or trans chamber 325, thedevice-structure of the nanodevice 300 is free from leakage-currentduring ionic-transistor device operations.

Now turning to FIG. 4, a method 400 of providing the nanodevice 300 isillustrated according to an embodiment. Reference can be made to FIGS.1-3. The gate electrode structure 100 is provided with nanochannels 150having a first end connected to the first common trench 160 and a secondend connected to a second common trench 165 at block 405.

At block 410, the gate electrode 115 extends laterally as a continuous(metal) line on the gate electrode structure 100 and is formed in eachof the nanochannels 150, such that the gate electrode 115 forms separatenano-ring electrodes 117 around a partial circumference inside each ofthe nanochannels 150.

The gate electrode 115 is formed parallel to the first and second commontrenches 160 and 165 and is formed perpendicular to the nanochannels 150at block 415.

The gate electrode 115, extending as the continuous metal line, has aline width (w1) of less than 20 nanometers, and accordingly, the linewidth of the nano-ring electrode 117 is less than 20 nanometers. Inanother case, the gate electrode 115 extending as the continuous linehas a line width (w1) of about 10 to 20 nanometers, and accordingly, theline width of the nano-ring electrode 117 is about 10 to 20 nanometers.

The nano-ring electrode 117 has a ring shape with an opening at the topof the ring shape.

The nanochannels 150 are each sealed by a conformal material within acircumference of the nano-ring electrode 117 to leave the void 180 ineach of the nanochannels 150. The void 180 is an opening that extendsfrom the first common trench 160 and to the second common trench 165,such that the electrolyte solution and biomolecules can traverse throughthe nanochannels 150.

The first electrode pad 305 connects to one end of the gate electrode115 and the second electrode pad 310 connects to an opposite end of thegate electrode 115, such that the gate electrode 115 is in thecontinuous line between the first and second electrode pads 305 and 310.

A biomolecule is captured in the nano-ring electrode 117 at a crosspoint of the gate electrode 115 and a particular nanochannel 150.

Additionally, a biomolecule (e.g., negatively charged) may be trapped inthe nanochannel 150 by applying a first voltage (e.g., +0.5 volts (V))to the gate electrode 115 via the voltage source 302. In response totrapping the biomolecule, the biomolecule (DNA, RNA, protein, etc.) isstretched in the nanochannel 150 by applying a second voltage (e.g.,−0.5 V) to the gate electrode 115 via the voltage source 302, wherestretching the biomolecule is based on changing from the first voltage(+0.5 V) to the second voltage (−0.5) applied to the gate electrode 115.The first voltage is a different polarity from the second voltage, andthe biomolecule has a charge, such that the biomolecule is eithernegatively charged or positively charged. The first voltage (e.g., +0.5V) is applied with a first polarity that is opposite the charge on thebiomolecule (e.g., negatively charged).

Applying the first voltage with the first polarity opposite the chargeon the biomolecule pulls the biomolecule down to the region of the gateelectrode 115 in the nanochannel 150. The second voltage (e.g., −0.5 V)is applied with a second polarity that is a same as the charge on thebiomolecule (e.g., negatively charged). Applying the second voltage withthe second polarity the same as the charge on the biomolecule pulls afirst coiled part of the biomolecule in one direction and a secondcoiled part in an opposite direction while a higher voltage/potential isapplied by the voltage source 330 (via the cis chamber electrode 370 inthe cis chamber 320 and via the trans chamber electrode 375 in the transchamber 325). Pulling the biomolecule in two opposite directions causesa straightened part between the first and second coiled parts of thebiomolecule.

According to an embodiment, FIG. 5A is a voltage profile 500illustrating an example of trapping the biomolecule 10 (e.g., DNA) inthe nanochannel 150 of the nanodevice 300 using the single gateelectrode 115 in the substrate 105. FIG. 5B is a voltage profile 550illustrating stretching the biomolecule 10 in the nanochannel 150 of thenanodevice 300 using the single gate electrode 115 in the substrate 105according to an embodiment. FIGS. 5A and 5B may generally be referred toas FIG. 5. Note that the details of the nanodevice 300 (shown/discussedin FIGS. 1-4) are omitted so as not to obscure FIG. 5, but it iscontemplated that the elements in FIGS. 1-3 are meant to be included.

First, details of the trapping behavior are shown in FIG. 5A. A voltageis applied between electrodes 370 and 375 by voltage source 330, inorder to drive the negatively charged biomolecule 10 into thenanochannel 150. Once in the nanochannel 150, a +0.5 V gate voltage(positive polarity) of the gate electrode 115 is turned on by voltagesource 302. The positive polarity of the gate voltage traps thenegatively charged biomolecule 10 in the nanochannel 150, bydrawing/pulling the biomolecule 10 down to the gate electrode 115 andthe substrate 105 (this may be referred to as the gate electrode regionwithin the nanochannel 150). As a result of the +0.5 V gate voltage, twoelectric fields 505 (E_1) and 510 (E_2) in the nanochannel 150 create atrapping potential well for the negatively charged biomolecule 10. Theelectric fields 505 and 510 create forces 515 (FE_1) and 520 (FE_2) thathold the negatively charged biomolecule 10 in place within thenanochannel 150.

Second, once trapped in place, details of the stretching are furthershown in FIG. 5B. As applied by the voltage source 330, assume that thevoltage (V_(cis)) on electrode 370 is 0 volts (in the top/cis reservoir320) and the voltage (V_(Trans)) on electrode 375 is 0.1 volts (in thebottom/trans reservoir 325). Also, assume now that −0.5 volts areapplied to the gate electrode 115 at this time. Accordingly, the gatevoltage (−0.5 V) is less than the voltage on the electrode 370 (0 V) inthe top reservoir 320 and less than the voltage on the electrode 375(0.1 V) in the bottom reservoir 325. The negative voltage on the gateelectrode 115 creates two electric fields 525 (E_3) and 530 (E_4) in thenanochannel 150. The electric field 525 (E_3) points from the 0 V on theelectrode 370 in the top reservoir 320 to the −0.5 V gate voltage of thegate electrode 115. The electric field 530 (E_4) points from the 0.1 Von the electrode 375 in the bottom reservoir 325 to the −0.5 V gatevoltage of the gate electrode.

The electric field 525 creates a force 535 (FE_3) that pushes thebiomolecule 10 to the left, whereas the electric field 530 (E_4) createsa force 540 (FE_4) that pushes the biomolecule 10 to the right. Therepulsing forces 535 and 540 stretch the biomolecule 10, as shown inFIG. 5B. Viewed from left to right, the negatively charged biomolecule10 has coiled part 11A, followed by stretched/straightened part 12, andthen followed by coiled part 11B, all of which is a result of the forces535 and 540.

FIG. 6 illustrates a schematic 600 of the nanodevice 300 with multiplethin gate electrodes 115 each crossing the narrow nanochannels 150according to an embodiment. Each location (e.g., at the nano-ring gateelectrode 117) at which a gate electrode 115 crosses one of the narrownanochannels 150 is a crosspoint. Each of the details in FIGS. 1-4 ismeant to be included but some details are omitted for the sake ofclarity.

The multiple thin gate electrodes 115 provide random access trappingthat allows for addressing and trapping the biomolecules by the multiplemetal electrodes M1-M10. When the opposite polarity (to the biomoleculesin the nanochannel 150) is applied by the voltage source 302 to themultiple thin gate electrodes 115, this gives the multiple thin gateelectrodes 115 more opportunities to trap (and then stretch) thebiomolecules that are in the nanochannels 150. However, only a singlegate electrode 115 is needed to trap the biomolecule is thisone-electrode trapping system. Having the multiple metal electrodesM1-M10 does not mean that more than one gate electrode 115 is requiredto trap the biomolecule but provides a greater probability for of anyone of the multiple metal electrodes M1-M10 to trap a biomolecule withina particular nanochannel 150.

Some technical benefits as discussed herein include the gate-electrodegeometry, which has the thin stripe-type gate electrode structure (e.g.,about or less than 20 nm line width. The gate electrode structurecreates a highly-localized electrical-potential trap in the nanochannel.The nanodevice can contain multiple thin stripe gate electrodes inparallel. Also, the nanodevice provides a leakage-freedevice-performance in the lateral-type nanochannel ion transistor.

FIG. 7 illustrates an example of a computer 700 (e.g., as part of thecomputer test setup for testing and analysis) which may implement,control, and/or regulate the respective voltages of the voltage sources,respective measurements of ammeters, and display screens for displayingvarious current amplitude as would be understood to one skilled in theart.

Various methods, procedures, modules, flow diagrams, tools,applications, circuits, elements, and techniques discussed herein mayalso incorporate and/or utilize the capabilities of the computer 700.Moreover, capabilities of the computer 700 may be utilized to implementfeatures of exemplary embodiments discussed herein. One or more of thecapabilities of the computer 700 may be utilized to implement, toconnect to, and/or to support any element discussed herein (asunderstood by one skilled in the art. For example, the computer 700which may be any type of computing device and/or test equipment(including ammeters, voltage sources, current meters, connectors, etc.).Input/output device 770 (having proper software and hardware) ofcomputer 700 may include and/or be coupled to the nanodevices andstructures discussed herein via cables, plugs, wires, electrodes, patchclamps, pads, etc. Also, the communication interface of the input/outputdevices 770 comprises hardware and software for communicating with,operatively connecting to, reading, and/or controlling voltage sources,ammeters, and current traces (e.g., magnitude and time duration ofcurrent), etc., as understood by one skilled in the art. The userinterfaces of the input/output device 770 may include, e.g., a trackball, mouse, pointing device, keyboard, touch screen, etc., forinteracting with the computer 700, such as inputting information, makingselections, independently controlling different voltages sources, and/ordisplaying, viewing and recording current traces for each base,molecule, biomolecules, etc.

Generally, in terms of hardware architecture, the computer 700 mayinclude one or more processors 710, computer readable storage memory720, and one or more input and/or output (I/O) devices 770 that arecommunicatively coupled via a local interface (not shown). The localinterface can be, for example but not limited to, one or more buses orother wired or wireless connections, as is known in the art. The localinterface may have additional elements, such as controllers, buffers(caches), drivers, repeaters, and receivers, to enable communications.Further, the local interface may include address, control, and/or dataconnections to enable appropriate communications among theaforementioned components.

The processor 710 is a hardware device for executing software that canbe stored in the memory 720. The processor 710 can be virtually anycustom made or commercially available processor, a central processingunit (CPU), a data signal processor (DSP), or an auxiliary processoramong several processors associated with the computer 700, and theprocessor 710 may be a semiconductor based microprocessor (in the formof a microchip) or a macroprocessor.

The computer readable memory 720 can include any one or combination ofvolatile memory elements (e.g., random access memory (RAM), such asdynamic random access memory (DRAM), static random access memory (SRAM),etc.) and nonvolatile memory elements (e.g., ROM, erasable programmableread only memory (EPROM), electronically erasable programmable read onlymemory (EEPROM), programmable read only memory (PROM), tape, compactdisc read only memory (CD-ROM), disk, diskette, cartridge, cassette orthe like, etc.). Moreover, the memory 720 may incorporate electronic,magnetic, optical, and/or other types of storage media. Note that thememory 720 can have a distributed architecture, where various componentsare situated remote from one another, but can be accessed by theprocessor 710.

The software in the computer readable memory 720 may include one or moreseparate programs, each of which comprises an ordered listing ofexecutable instructions for implementing logical functions. The softwarein the memory 720 includes a suitable operating system (O/S) 750,compiler 740, source code 730, and one or more applications 760 of theexemplary embodiments. As illustrated, the application 760 comprisesnumerous functional components for implementing the features, processes,methods, functions, and operations of the exemplary embodiments.

The operating system 750 may control the execution of other computerprograms, and provides scheduling, input-output control, file and datamanagement, memory management, and communication control and relatedservices.

The application 760 may be a source program, executable program (objectcode), script, or any other entity comprising a set of instructions tobe performed. When a source program, then the program is usuallytranslated via a compiler (such as the compiler 740), assembler,interpreter, or the like, which may or may not be included within thememory 720, so as to operate properly in connection with the O/S 750.Furthermore, the application 760 can be written as (a) an objectoriented programming language, which has classes of data and methods, or(b) a procedure programming language, which has routines, subroutines,and/or functions.

The I/O devices 770 may include input devices (or peripherals) such as,for example but not limited to, a mouse, keyboard, scanner, microphone,camera, etc. Furthermore, the I/O devices 770 may also include outputdevices (or peripherals), for example but not limited to, a printer,display, etc. Finally, the I/O devices 770 may further include devicesthat communicate both inputs and outputs, for instance but not limitedto, a NIC or modulator/demodulator (for accessing remote devices, otherfiles, devices, systems, or a network), a radio frequency (RF) or othertransceiver, a telephonic interface, a bridge, a router, etc. The I/Odevices 770 also include components for communicating over variousnetworks, such as the Internet or an intranet. The I/O devices 770 maybe connected to and/or communicate with the processor 710 utilizingBluetooth connections and cables (via, e.g., Universal Serial Bus (USB)ports, serial ports, parallel ports, FireWire, HDMI (High-DefinitionMultimedia Interface), etc.).

In exemplary embodiments, where the application 760 is implemented inhardware, the application 760 can be implemented with any one or acombination of the following technologies, which are each well known inthe art: a discrete logic circuit(s) having logic gates for implementinglogic functions upon data signals, an application specific integratedcircuit (ASIC) having appropriate combinational logic gates, aprogrammable gate array(s) (PGA), a field programmable gate array(FPGA), etc.

As will be appreciated by one skilled in the art, aspects of the presentinvention may be embodied as a system, method or computer programproduct. Accordingly, aspects of the present invention may take the formof an entirely hardware embodiment, an entirely software embodiment(including firmware, resident software, micro-code, etc.) or anembodiment combining software and hardware aspects that may allgenerally be referred to herein as a “circuit,” “module” or “system.”Furthermore, aspects of the present invention may take the form of acomputer program product embodied in one or more computer readablemedium(s) having computer readable program code embodied thereon.

Any combination of one or more computer readable medium(s) may beutilized. The computer readable medium may be a computer readable signalmedium or a computer readable storage medium. A computer readablestorage medium may be, for example, but not limited to, an electronic,magnetic, optical, electromagnetic, infrared, or semiconductor system,apparatus, or device, or any suitable combination of the foregoing. Morespecific examples (a non-exhaustive list) of the computer readablestorage medium would include the following: an electrical connectionhaving one or more wires, a portable computer diskette, a hard disk, arandom access memory (RAM), a read-only memory (ROM), an erasableprogrammable read-only memory (EPROM or Flash memory), an optical fiber,a portable compact disc read-only memory (CD-ROM), an optical storagedevice, a magnetic storage device, or any suitable combination of theforegoing. In the context of this document, a computer readable storagemedium may be any tangible medium that can contain, or store a programfor use by or in connection with an instruction execution system,apparatus, or device.

A computer readable signal medium may include a propagated data signalwith computer readable program code embodied therein, for example, inbaseband or as part of a carrier wave. Such a propagated signal may takeany of a variety of forms, including, but not limited to,electro-magnetic, optical, or any suitable combination thereof. Acomputer readable signal medium may be any computer readable medium thatis not a computer readable storage medium and that can communicate,propagate, or transport a program for use by or in connection with aninstruction execution system, apparatus, or device.

Program code embodied on a computer readable medium may be transmittedusing any appropriate medium, including but not limited to wireless,wireline, optical fiber cable, RF, etc., or any suitable combination ofthe foregoing.

Computer program code for carrying out operations for aspects of thepresent invention may be written in any combination of one or moreprogramming languages, including an object oriented programming languagesuch as Java, Smalltalk, C++, Labview software or the like andconventional procedural programming languages, such as the “C”programming language or similar programming languages. The program codemay execute entirely on the user's computer, partly on the user'scomputer, as a stand-alone software package, partly on the user'scomputer and partly on a remote computer or entirely on the remotecomputer or server. In the latter scenario, the remote computer may beconnected to the user's computer through any type of network, includinga local area network (LAN) or a wide area network (WAN), or theconnection may be made to an external computer (for example, through theInternet using an Internet Service Provider).

Aspects of the present invention are described herein with reference toflowchart illustrations and/or block diagrams of methods, apparatus(systems) and computer program products according to embodiments of theinvention. It will be understood that each block of the flowchartillustrations and/or block diagrams, and combinations of blocks in theflowchart illustrations and/or block diagrams, can be implemented bycomputer program instructions. These computer program instructions maybe provided to a processor of a general purpose computer, specialpurpose computer, or other programmable data processing apparatus toproduce a machine, such that the instructions, which execute via theprocessor of the computer or other programmable data processingapparatus, create means for implementing the functions/acts specified inthe flowchart and/or block diagram block or blocks.

These computer program instructions may also be stored in a computerreadable medium that can direct a computer, other programmable dataprocessing apparatus, or other devices to function in a particularmanner, such that the instructions stored in the computer readablemedium produce an article of manufacture including instructions whichimplement the function/act specified in the flowchart and/or blockdiagram block or blocks.

The computer program instructions may also be loaded onto a computer,other programmable data processing apparatus, or other devices to causea series of operational steps to be performed on the computer, otherprogrammable apparatus or other devices to produce a computerimplemented process such that the instructions which execute on thecomputer or other programmable apparatus provide processes forimplementing the functions/acts specified in the flowchart and/or blockdiagram block or blocks.

The flowchart and block diagrams in the Figures illustrate thearchitecture, functionality, and operation of possible implementationsof systems, methods and computer program products according to variousembodiments of the present invention. In this regard, each block in theflowchart or block diagrams may represent a module, segment, or portionof code, which comprises one or more executable instructions forimplementing the specified logical function(s). It should also be notedthat, in some alternative implementations, the functions noted in theblock may occur out of the order noted in the figures. For example, twoblocks shown in succession may, in fact, be executed substantiallyconcurrently, or the blocks may sometimes be executed in the reverseorder, depending upon the functionality involved. It will also be notedthat each block of the block diagrams and/or flowchart illustration, andcombinations of blocks in the block diagrams and/or flowchartillustration, can be implemented by special purpose hardware-basedsystems that perform the specified functions or acts, or combinations ofspecial purpose hardware and computer instructions.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneore more other features, integers, steps, operations, elementcomponents, and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the present invention has been presented for purposes ofillustration and description, but is not intended to be exhaustive orlimited to the invention in the form disclosed. Many modifications andvariations will be apparent to those of ordinary skill in the artwithout departing from the scope and spirit of the invention. Theembodiment was chosen and described in order to best explain theprinciples of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated

The flow diagrams depicted herein are just one example. There may bemany variations to this diagram or the steps (or operations) describedtherein without departing from the spirit of the invention. Forinstance, the steps may be performed in a differing order or steps maybe added, deleted or modified. All of these variations are considered apart of the claimed invention.

While the exemplary embodiments of the invention have been described, itwill be understood that those skilled in the art, both now and in thefuture, may make various improvements and enhancements which fall withinthe scope of the claims which follow. These claims should be construedto maintain the proper protection for the invention first described.

What is claimed is:
 1. A method of providing a nanodevice, the methodcomprising: providing a gate electrode structure having nanochannelswith a first end connected to a first common trench and a second endconnected to a second common trench; and providing a gate electrodewhich extends laterally as a continuous line on the gate electrodestructure and is formed in each of the nanochannels, wherein the gateelectrode forms a separate nano-ring electrode around a partialcircumference inside each of the nanochannels; wherein the gateelectrode is parallel to the first and second common trenches and isperpendicular to the nanochannels.
 2. The method of claim 1, wherein thegate electrode extending as the continuous line has a line width of lessthan 20 nanometers.
 3. The method of claim 1, wherein the gate electrodeextending as the continuous line has a line width of about 10 to 20nanometers.
 4. The method of claim 2, wherein a line width of thenano-ring electrode is less than 20 nanometers.
 5. The method of claim1, wherein the nano-ring electrode has a ring shape with an opening at atop of the ring shape.
 6. The method of claim 1, wherein thenanochannels are each sealed by a conformal material within acircumference of the nano-ring electrode to leave a void in each of thenanochannels; and wherein the void is an opening that extends from thefirst common trench and to the second common trench.
 7. The method ofclaim 1, wherein a first electrode pad connects to one end of the gateelectrode and a second electrode pad connects to an opposite end of thegate electrode, such that the gate electrode is in the continuous linebetween the first and second electrode pads.
 8. The method of claim 1,wherein a biomolecule is captured in the nano-ring electrode at a crosspoint of the gate electrode and a nanochannel.
 9. A method ofcontrolling biomolecules in a nanodevice, the method comprising:providing a gate electrode structure having a nanochannel with a firstend connected to a first common trench and a second end connected to asecond common trench; providing a gate electrode which extends laterallyas a continuous line on the gate electrode structure and is formed inthe nanochannel, wherein the gate electrode forms a nano-ring electrodearound a partial circumference inside of the nanochannel; wherein thegate electrode is parallel to the first and second common trenches andis perpendicular to the nanochannel; and trapping a biomolecule in thenanochannel by applying a first voltage to the gate electrode.
 10. Themethod of claim 9, further comprising in response to trapping thebiomolecule, stretching the biomolecule in the nanochannel by applying asecond voltage to the gate electrode; wherein stretching the biomoleculeis based on changing from the first voltage to the second voltageapplied to the gate electrode.
 11. The method of claim 10, wherein thefirst voltage is a different polarity from the second voltage; whereinthe biomolecule has a charge, such that the biomolecule is eithernegatively charged or positively charged.
 12. The method of claim 11,further comprising applying the first voltage with a first polarity thatis opposite the charge on the biomolecule.